COMPOSITION FOR TREATING SEMICONDUCTOR AND METHOD FOR TREATING OBJECT TO BE TREATED

The present invention provides a composition for treating a semiconductor in which etching of silicon germanium is suppressed and a ratio of an etching rate of silicon to an etching rate of silicon germanium is large. In addition, the present invention provides a method for treating an object to be...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Takahashi, Tomonori, Mizutani, Atsushi, SHIGENOI, Yuta
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!