IMAGING SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME

An image sensing device may include a substrate, a first gate, a photoelectric converter, a first semiconductor pattern including a floating diffusion, a second semiconductor pattern and a second gate. The substrate includes a light-receiving region and at least one active region. The first gate is arranged over the light-receiving region. The photoelectric converter is formed in the light-receiving region such that a first end of the first gate is disposed over the photoelectric converter. The first semiconductor pattern is formed over the substrate at a second end of the first gate. The first semiconductor pattern has a first height. The second semiconductor pattern is formed over the active region of the substrate. The second semiconductor pattern has a second height. The second gate is formed over the active region of the substrate to cover the second semiconductor pattern.