DOPANT DIFFUSION WITH SHORT HIGH TEMPERATURE ANNEAL PULSES

A method and apparatus for diffusing a dopant within a semiconductor device is described. The method includes performing a dynamic surface anneal in which a substrate is placed inside of a process volume with a mixture of an inert gas and a small amount of oxygen gas. The surface of the substrate is...

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Bibliographische Detailangaben

1. Verfasser:	ADERHOLD, Wolfgang R
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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