SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

A semiconductor device includes a first isolation structure extending through an upper portion of a substrate and defining a first active region, a first gate structure on the substrate, and first source/drain regions at upper portions of the first active region adjacent to the first gate structure....

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Hauptverfasser: Lee, Sohyun, Yun, Kangoh, Lee, Dongjin, Lim, Junhee
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lee, Sohyun
Yun, Kangoh
Lee, Dongjin
Lim, Junhee
description A semiconductor device includes a first isolation structure extending through an upper portion of a substrate and defining a first active region, a first gate structure on the substrate, and first source/drain regions at upper portions of the first active region adjacent to the first gate structure. The first isolation structure includes an upper isolation pattern structure and a lower isolation pattern. The upper isolation pattern structure includes a first isolation pattern and a second isolation pattern covering a sidewall of the first isolation pattern. The lower isolation pattern is formed under and contacting the upper isolation pattern structure, and a width of the lower isolation pattern is greater than a width of the upper isolation pattern structure.
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The first isolation structure includes an upper isolation pattern structure and a lower isolation pattern. The upper isolation pattern structure includes a first isolation pattern and a second isolation pattern covering a sidewall of the first isolation pattern. The lower isolation pattern is formed under and contacting the upper isolation pattern structure, and a width of the lower isolation pattern is greater than a width of the upper isolation pattern structure.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231214&amp;DB=EPODOC&amp;CC=US&amp;NR=2023402454A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231214&amp;DB=EPODOC&amp;CC=US&amp;NR=2023402454A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lee, Sohyun</creatorcontrib><creatorcontrib>Yun, Kangoh</creatorcontrib><creatorcontrib>Lee, Dongjin</creatorcontrib><creatorcontrib>Lim, Junhee</creatorcontrib><title>SEMICONDUCTOR DEVICES</title><description>A semiconductor device includes a first isolation structure extending through an upper portion of a substrate and defining a first active region, a first gate structure on the substrate, and first source/drain regions at upper portions of the first active region adjacent to the first gate structure. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICES
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