SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

First and second buffer regions and an n−-type drift region are sequentially formed by epitaxial growth on an n+-type starting substrate. An impurity concentration of the first buffer region is higher than that of the n−-type drift region and lower than that of the n+-type starting substrate. An imp...

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Bibliographische Detailangaben

Hauptverfasser:	UTSUMI, Makoto, MIYAZATO, Masaki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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