REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES

A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, a...

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Bibliographische Detailangaben

Hauptverfasser:	Huang, Cheng-Ying, Addepalli, Venkata Aditya, Thomas, Nicole K, Wiedemer, Jami A, Unluer, Dincer, Bennett, David, Radosavljevic, Marko, Rachmady, Willy, Qayyum, Munzarin F, Galatage, Rohit
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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