REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES
A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, a...
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| creator | Huang, Cheng-Ying Addepalli, Venkata Aditya Thomas, Nicole K Wiedemer, Jami A Unluer, Dincer Bennett, David Radosavljevic, Marko Rachmady, Willy Qayyum, Munzarin F Galatage, Rohit |
| description | A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023395697A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023395697A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023395697A13</originalsourceid><addsrcrecordid>eNqNyrsKwjAUANAsDqL-wwUXHQLaoNLxmty2wZiUPLqWInESLdT_Rwc_wOksZ868p6vr0ICrILUteZANWksGzk5pCqAthIjyQgpqjMTRGI7eJatgUyNuQVGnJX2TTzImT2HJZvfhMeXVzwVbVxRlw_P46vM0Drf8zO8-hWJXCFEejuUJ9-K_9QFCuTAQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES</title><source>esp@cenet</source><creator>Huang, Cheng-Ying ; Addepalli, Venkata Aditya ; Thomas, Nicole K ; Wiedemer, Jami A ; Unluer, Dincer ; Bennett, David ; Radosavljevic, Marko ; Rachmady, Willy ; Qayyum, Munzarin F ; Galatage, Rohit</creator><creatorcontrib>Huang, Cheng-Ying ; Addepalli, Venkata Aditya ; Thomas, Nicole K ; Wiedemer, Jami A ; Unluer, Dincer ; Bennett, David ; Radosavljevic, Marko ; Rachmady, Willy ; Qayyum, Munzarin F ; Galatage, Rohit</creatorcontrib><description>A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395697A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395697A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, Cheng-Ying</creatorcontrib><creatorcontrib>Addepalli, Venkata Aditya</creatorcontrib><creatorcontrib>Thomas, Nicole K</creatorcontrib><creatorcontrib>Wiedemer, Jami A</creatorcontrib><creatorcontrib>Unluer, Dincer</creatorcontrib><creatorcontrib>Bennett, David</creatorcontrib><creatorcontrib>Radosavljevic, Marko</creatorcontrib><creatorcontrib>Rachmady, Willy</creatorcontrib><creatorcontrib>Qayyum, Munzarin F</creatorcontrib><creatorcontrib>Galatage, Rohit</creatorcontrib><title>REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES</title><description>A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrsKwjAUANAsDqL-wwUXHQLaoNLxmty2wZiUPLqWInESLdT_Rwc_wOksZ868p6vr0ICrILUteZANWksGzk5pCqAthIjyQgpqjMTRGI7eJatgUyNuQVGnJX2TTzImT2HJZvfhMeXVzwVbVxRlw_P46vM0Drf8zO8-hWJXCFEejuUJ9-K_9QFCuTAQ</recordid><startdate>20231207</startdate><enddate>20231207</enddate><creator>Huang, Cheng-Ying</creator><creator>Addepalli, Venkata Aditya</creator><creator>Thomas, Nicole K</creator><creator>Wiedemer, Jami A</creator><creator>Unluer, Dincer</creator><creator>Bennett, David</creator><creator>Radosavljevic, Marko</creator><creator>Rachmady, Willy</creator><creator>Qayyum, Munzarin F</creator><creator>Galatage, Rohit</creator><scope>EVB</scope></search><sort><creationdate>20231207</creationdate><title>REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES</title><author>Huang, Cheng-Ying ; Addepalli, Venkata Aditya ; Thomas, Nicole K ; Wiedemer, Jami A ; Unluer, Dincer ; Bennett, David ; Radosavljevic, Marko ; Rachmady, Willy ; Qayyum, Munzarin F ; Galatage, Rohit</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023395697A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Huang, Cheng-Ying</creatorcontrib><creatorcontrib>Addepalli, Venkata Aditya</creatorcontrib><creatorcontrib>Thomas, Nicole K</creatorcontrib><creatorcontrib>Wiedemer, Jami A</creatorcontrib><creatorcontrib>Unluer, Dincer</creatorcontrib><creatorcontrib>Bennett, David</creatorcontrib><creatorcontrib>Radosavljevic, Marko</creatorcontrib><creatorcontrib>Rachmady, Willy</creatorcontrib><creatorcontrib>Qayyum, Munzarin F</creatorcontrib><creatorcontrib>Galatage, Rohit</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Cheng-Ying</au><au>Addepalli, Venkata Aditya</au><au>Thomas, Nicole K</au><au>Wiedemer, Jami A</au><au>Unluer, Dincer</au><au>Bennett, David</au><au>Radosavljevic, Marko</au><au>Rachmady, Willy</au><au>Qayyum, Munzarin F</au><au>Galatage, Rohit</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES</title><date>2023-12-07</date><risdate>2023</risdate><abstract>A semiconductor structure includes a second device stacked over a first device. In an example, the first device includes (i) a first source region, (ii) a first drain region, (iii) a body including a semiconductor material extending laterally from the first source region to the first drain region, and (iv) a first gate structure at least in part wrapped around the body. The body can be, for instance, a nanoribbon, nanosheet, or nanowire. In an example, the second device comprises (i) a second source region, (ii) a second drain region, and (iii) a second gate structure at least in part laterally between the second source region and the second drain region. In an example, the second device lacks a continuous body extending laterally from the second source region to the second drain region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DEVICE STRUCTURES |
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