SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE
Methods, systems, and devices for selective cavity merging for isolation regions in a memory die are described. For example, formation of material structures of a memory die may include depositing a stack of alternating layers of a first material and a second material over a substrate of the memory...
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| creator | Fukuzumi, Yoshiaki Kim, Byeung Chul Hill, Richard H Tessariol, Paolo Wells, David H |
| description | Methods, systems, and devices for selective cavity merging for isolation regions in a memory die are described. For example, formation of material structures of a memory die may include depositing a stack of alternating layers of a first material and a second material over a substrate of the memory die, forming a pattern of cavities through the stack of alternating material layers, and forming voids between layers of the first material based on removing portions of the second material. An electrical isolation region may be formed between portions of the memory die based on depositing a dielectric material in at least some of the cavities and in at least a portion of the voids between the layers of the first material. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE |
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