ETCHING METHOD AND ETCHING APPARATUS

An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supply...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIN, Jun, IGARASHI, Yoshiki, CHU, Chengya, KIKUSHIMA, Satoru, SUGA, Takayuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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