METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND POWER CONVERSION DEVICE
Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step fo...
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| creator | Moritsuka, Tsubasa Furukawa, Tomoyasu |
| description | Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated. |
| format | Patent |
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A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated.</description><language>eng</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395382A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395382A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Moritsuka, Tsubasa</creatorcontrib><creatorcontrib>Furukawa, Tomoyasu</creatorcontrib><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND POWER CONVERSION DEVICE</title><description>Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated.</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCjzdQ3x8HdRcPMPUvB19At1c3QOCQ3y9HNXCHb19XT293MJdQ4Byrm4hnk6u-oQJerr7xLqAxR19HNRCPAPdw1SAMqFuQYFe_r7QbXwMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNjY0tTYwsjR0Nj4lQBAD5-OrQ</recordid><startdate>20231207</startdate><enddate>20231207</enddate><creator>Moritsuka, Tsubasa</creator><creator>Furukawa, Tomoyasu</creator><scope>EVB</scope></search><sort><creationdate>20231207</creationdate><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND POWER CONVERSION DEVICE</title><author>Moritsuka, Tsubasa ; Furukawa, Tomoyasu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023395382A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATION THEREOF</topic><topic>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Moritsuka, Tsubasa</creatorcontrib><creatorcontrib>Furukawa, Tomoyasu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Moritsuka, Tsubasa</au><au>Furukawa, Tomoyasu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND POWER CONVERSION DEVICE</title><date>2023-12-07</date><risdate>2023</risdate><abstract>Provided are a semiconductor device and a power converting device utilizing a field-stop layer in a vertical semiconductor device with improved manufacturability using large-diameter wafers. A semiconductor device manufacturing method according to the present invention is characterized by: a step for, after a pattern on a main surface side of a drift layer of a first conductivity type is formed, irradiating ions from a second main surface side to a predetermined depth; a step for, after the ion irradiation, converting the ions into donors by anneal processing of heating at 300-450° C. for 60 seconds or less, thereby forming a field-stop layer; and a step for reducing the thickness of a semiconductor substrate to a predetermined value from the second main surface side such that a crystal defect having occurred in the ion irradiating step is eliminated.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
| title | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND POWER CONVERSION DEVICE |
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