SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is mai...

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Hauptverfasser: OGAWA, Jun, TANAKA, Yuki, IGARASHI, Kazumasa
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OGAWA, Jun
TANAKA, Yuki
IGARASHI, Kazumasa
description A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023395371A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023395371A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023395371A13</originalsourceid><addsrcrecordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HdRcPRzUcAq7xgQ4AgUCw3mYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGxpamxuaGjobGxKkCAEMxK5g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><source>esp@cenet</source><creator>OGAWA, Jun ; TANAKA, Yuki ; IGARASHI, Kazumasa</creator><creatorcontrib>OGAWA, Jun ; TANAKA, Yuki ; IGARASHI, Kazumasa</creatorcontrib><description>A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231207&amp;DB=EPODOC&amp;CC=US&amp;NR=2023395371A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231207&amp;DB=EPODOC&amp;CC=US&amp;NR=2023395371A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OGAWA, Jun</creatorcontrib><creatorcontrib>TANAKA, Yuki</creatorcontrib><creatorcontrib>IGARASHI, Kazumasa</creatorcontrib><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><description>A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALDnUKDglyDHFVCAjyd3YNDvb0c1fwdQ3x8HdRcPRzUcAq7xgQ4AgUCw3mYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGxpamxuaGjobGxKkCAEMxK5g</recordid><startdate>20231207</startdate><enddate>20231207</enddate><creator>OGAWA, Jun</creator><creator>TANAKA, Yuki</creator><creator>IGARASHI, Kazumasa</creator><scope>EVB</scope></search><sort><creationdate>20231207</creationdate><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><author>OGAWA, Jun ; TANAKA, Yuki ; IGARASHI, Kazumasa</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023395371A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OGAWA, Jun</creatorcontrib><creatorcontrib>TANAKA, Yuki</creatorcontrib><creatorcontrib>IGARASHI, Kazumasa</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OGAWA, Jun</au><au>TANAKA, Yuki</au><au>IGARASHI, Kazumasa</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS</title><date>2023-12-07</date><risdate>2023</risdate><abstract>A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T01%3A45%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OGAWA,%20Jun&rft.date=2023-12-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023395371A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true