ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM

According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wang, Chulin, Arpaci, Sevde Nur, Dominguez, Victor Lopez, Khalili-Amiri, Pedram, Grayson, Matthew A, Onsager, Claire Cecelia
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Wang, Chulin
Arpaci, Sevde Nur
Dominguez, Victor Lopez
Khalili-Amiri, Pedram
Grayson, Matthew A
Onsager, Claire Cecelia
description According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023395112A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023395112A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023395112A13</originalsourceid><addsrcrecordid>eNrjZHBx9XF1DgnydHb0UQgP8gxx1Q9ydXRR8HdT8PB099D19HPzD_J1DPH099N1cfUL9gyJVPB1dPdzDfF0Vgjx8PRTcPP08eVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsbGlqaGhkaOhsbEqQIAAFMsnQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><source>esp@cenet</source><creator>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</creator><creatorcontrib>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</creatorcontrib><description>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</description><language>eng</language><subject>INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231207&amp;DB=EPODOC&amp;CC=US&amp;NR=2023395112A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231207&amp;DB=EPODOC&amp;CC=US&amp;NR=2023395112A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Chulin</creatorcontrib><creatorcontrib>Arpaci, Sevde Nur</creatorcontrib><creatorcontrib>Dominguez, Victor Lopez</creatorcontrib><creatorcontrib>Khalili-Amiri, Pedram</creatorcontrib><creatorcontrib>Grayson, Matthew A</creatorcontrib><creatorcontrib>Onsager, Claire Cecelia</creatorcontrib><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><description>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</description><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBx9XF1DgnydHb0UQgP8gxx1Q9ydXRR8HdT8PB099D19HPzD_J1DPH099N1cfUL9gyJVPB1dPdzDfF0Vgjx8PRTcPP08eVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsbGlqaGhkaOhsbEqQIAAFMsnQ</recordid><startdate>20231207</startdate><enddate>20231207</enddate><creator>Wang, Chulin</creator><creator>Arpaci, Sevde Nur</creator><creator>Dominguez, Victor Lopez</creator><creator>Khalili-Amiri, Pedram</creator><creator>Grayson, Matthew A</creator><creator>Onsager, Claire Cecelia</creator><scope>EVB</scope></search><sort><creationdate>20231207</creationdate><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><author>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023395112A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Chulin</creatorcontrib><creatorcontrib>Arpaci, Sevde Nur</creatorcontrib><creatorcontrib>Dominguez, Victor Lopez</creatorcontrib><creatorcontrib>Khalili-Amiri, Pedram</creatorcontrib><creatorcontrib>Grayson, Matthew A</creatorcontrib><creatorcontrib>Onsager, Claire Cecelia</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Chulin</au><au>Arpaci, Sevde Nur</au><au>Dominguez, Victor Lopez</au><au>Khalili-Amiri, Pedram</au><au>Grayson, Matthew A</au><au>Onsager, Claire Cecelia</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><date>2023-12-07</date><risdate>2023</risdate><abstract>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2023395112A1
source esp@cenet
subjects INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
STATIC STORES
title ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T02%3A03%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Wang,%20Chulin&rft.date=2023-12-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023395112A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true