ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM
According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the th...
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creator | Wang, Chulin Arpaci, Sevde Nur Dominguez, Victor Lopez Khalili-Amiri, Pedram Grayson, Matthew A Onsager, Claire Cecelia |
description | According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023395112A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023395112A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023395112A13</originalsourceid><addsrcrecordid>eNrjZHBx9XF1DgnydHb0UQgP8gxx1Q9ydXRR8HdT8PB099D19HPzD_J1DPH099N1cfUL9gyJVPB1dPdzDfF0Vgjx8PRTcPP08eVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsbGlqaGhkaOhsbEqQIAAFMsnQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><source>esp@cenet</source><creator>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</creator><creatorcontrib>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</creatorcontrib><description>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</description><language>eng</language><subject>INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395112A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231207&DB=EPODOC&CC=US&NR=2023395112A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Wang, Chulin</creatorcontrib><creatorcontrib>Arpaci, Sevde Nur</creatorcontrib><creatorcontrib>Dominguez, Victor Lopez</creatorcontrib><creatorcontrib>Khalili-Amiri, Pedram</creatorcontrib><creatorcontrib>Grayson, Matthew A</creatorcontrib><creatorcontrib>Onsager, Claire Cecelia</creatorcontrib><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><description>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</description><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHBx9XF1DgnydHb0UQgP8gxx1Q9ydXRR8HdT8PB099D19HPzD_J1DPH099N1cfUL9gyJVPB1dPdzDfF0Vgjx8PRTcPP08eVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsbGlqaGhkaOhsbEqQIAAFMsnQ</recordid><startdate>20231207</startdate><enddate>20231207</enddate><creator>Wang, Chulin</creator><creator>Arpaci, Sevde Nur</creator><creator>Dominguez, Victor Lopez</creator><creator>Khalili-Amiri, Pedram</creator><creator>Grayson, Matthew A</creator><creator>Onsager, Claire Cecelia</creator><scope>EVB</scope></search><sort><creationdate>20231207</creationdate><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><author>Wang, Chulin ; Arpaci, Sevde Nur ; Dominguez, Victor Lopez ; Khalili-Amiri, Pedram ; Grayson, Matthew A ; Onsager, Claire Cecelia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023395112A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Wang, Chulin</creatorcontrib><creatorcontrib>Arpaci, Sevde Nur</creatorcontrib><creatorcontrib>Dominguez, Victor Lopez</creatorcontrib><creatorcontrib>Khalili-Amiri, Pedram</creatorcontrib><creatorcontrib>Grayson, Matthew A</creatorcontrib><creatorcontrib>Onsager, Claire Cecelia</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Chulin</au><au>Arpaci, Sevde Nur</au><au>Dominguez, Victor Lopez</au><au>Khalili-Amiri, Pedram</au><au>Grayson, Matthew A</au><au>Onsager, Claire Cecelia</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM</title><date>2023-12-07</date><risdate>2023</risdate><abstract>According to certain aspects of the present disclosure, a device is provided. The device includes a thin film of cobalt. A platinum layer is disposed on the thin film of cobalt. An aluminum layer is disposed on the platinum layer. The aluminum layer disposed on the platinum layer encapsulates the thin film of cobalt. A plurality of electrical contacts is in electrical communication with the thin film of cobalt. Two electrical contacts of the plurality of electrical contacts are configured to receive a write-current therebetween. Four electrical contacts of the plurality of contacts are configured for reading a 4-point resistance.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS STATIC STORES |
title | ELECTRICAL WRITE/READ OF HIGH-INFORMATION-DENSITY MAGNETIC THIN FILM |
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