THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

A three-dimensional (3D) memory device includes a staircase region including a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, and a through array contact extending vertically through the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wan, Xianjin, Wu, Guanping, Shi, Wenguang, Chen, Baoyou, Lu, Zhenyu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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