THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE

A three-dimensional (3D) memory device includes a staircase region including a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, and a through array contact extending vertically through the...

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Hauptverfasser: Wan, Xianjin, Wu, Guanping, Shi, Wenguang, Chen, Baoyou, Lu, Zhenyu
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Wan, Xianjin
Wu, Guanping
Shi, Wenguang
Chen, Baoyou
Lu, Zhenyu
description A three-dimensional (3D) memory device includes a staircase region including a first stack and a second stack, a barrier structure extending vertically through the first stack and laterally separating the first stack from the second stack, and a through array contact extending vertically through the first stack. The first stack includes first and second dielectric layers arranged alternately in a vertical direction. The second stack includes conductor layers and third dielectric layers arranged alternately in the vertical direction. The barrier structure includes an unclosed shape.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
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