Channel Structures For Semiconductor Devices

The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers and second nanostructured layers on a fin structure. The method can also include removing the second...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHIH, Ding-Kang, TSAI, Pang-Yen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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