ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION
The disclosure is directed to techniques in preparing an atom probe tomography ("APT") specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, un...
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| creator | LEE, Jang Jung HUNG, Shih-Wei |
| description | The disclosure is directed to techniques in preparing an atom probe tomography ("APT") specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam ("FIB") microscopes is then conducted to shape the bump structures into APT specimen. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023386783A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023386783A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023386783A13</originalsourceid><addsrcrecordid>eNrjZNByDPH3VQgI8ndyVQCy_N2DHAM8IhWCA1ydPX1d_YAyrgGOQY4hnv5-PAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2NjCzNzC2NHQmDhVAP5fJeU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION</title><source>esp@cenet</source><creator>LEE, Jang Jung ; HUNG, Shih-Wei</creator><creatorcontrib>LEE, Jang Jung ; HUNG, Shih-Wei</creatorcontrib><description>The disclosure is directed to techniques in preparing an atom probe tomography ("APT") specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam ("FIB") microscopes is then conducted to shape the bump structures into APT specimen.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231130&DB=EPODOC&CC=US&NR=2023386783A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231130&DB=EPODOC&CC=US&NR=2023386783A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, Jang Jung</creatorcontrib><creatorcontrib>HUNG, Shih-Wei</creatorcontrib><title>ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION</title><description>The disclosure is directed to techniques in preparing an atom probe tomography ("APT") specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam ("FIB") microscopes is then conducted to shape the bump structures into APT specimen.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNByDPH3VQgI8ndyVQCy_N2DHAM8IhWCA1ydPX1d_YAyrgGOQY4hnv5-PAysaYk5xam8UJqbQdnNNcTZQze1ID8-tbggMTk1L7UkPjTYyMDI2NjCzNzC2NHQmDhVAP5fJeU</recordid><startdate>20231130</startdate><enddate>20231130</enddate><creator>LEE, Jang Jung</creator><creator>HUNG, Shih-Wei</creator><scope>EVB</scope></search><sort><creationdate>20231130</creationdate><title>ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION</title><author>LEE, Jang Jung ; HUNG, Shih-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023386783A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, Jang Jung</creatorcontrib><creatorcontrib>HUNG, Shih-Wei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Jang Jung</au><au>HUNG, Shih-Wei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION</title><date>2023-11-30</date><risdate>2023</risdate><abstract>The disclosure is directed to techniques in preparing an atom probe tomography ("APT") specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam ("FIB") microscopes is then conducted to shape the bump structures into APT specimen.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T20%3A11%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEE,%20Jang%20Jung&rft.date=2023-11-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023386783A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |