SPARK GAP STRUCTURES FOR DETECTION AND PROTECTION AGAINST ELECTRICAL OVERSTRESS EVENTS

The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device incl...

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Hauptverfasser: McGuinness, Patrick Martin, Clarke, David J, Bradley, Shaun, Wei, Nijun, Coyne, Edward John, Heffernan, Stephen Denis, Boland, David M, Aherne, David, O'Donnell, Alan J
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creator McGuinness, Patrick Martin
Clarke, David J
Bradley, Shaun
Wei, Nijun
Coyne, Edward John
Heffernan, Stephen Denis
Boland, David M
Aherne, David
O'Donnell, Alan J
description The disclosed technology generally relates to electrical overstress protection devices, and more particularly to electrical overstress monitoring devices for detecting electrical overstress events in semiconductor devices. In one aspect, an electrical overstress monitor and/or protection device includes a two different conductive structures configured to electrically arc in response to an EOS event and a sensing circuit configured to detect a change in a physical property of the two conductive structures caused by the EOS event. The two conductive structures have facing surfaces that have different shapes;
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subjects BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title SPARK GAP STRUCTURES FOR DETECTION AND PROTECTION AGAINST ELECTRICAL OVERSTRESS EVENTS
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