MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

A method includes sequentially depositing a floating gate layer, a dielectric structure stack, and a control gate layer over a substrate. A first etching process is performed to pattern the control gate layer, the dielectric structure stack, and a top portion of the floating gate layer to form a con...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUNG, Chih-Wei, LIN, Yu-Chu, LIAO, Keng-Ying, JEN, Chi-Chung, PAN, Chia-Ming, YEH, Su-Yu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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