SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE

A semiconductor device includes a semiconductor substrate comprising a P-type lightly doped semiconductor layer; an undoped silicon layer formed on the P-type lightly doped semiconductor layer; a first deep trench isolation and a second deep trench isolation formed from an upper surface of the semic...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	PANG, Yon Sup
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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