SEMICONDUCTOR DEVICE HAVING DOPED WORK FUNCTION METAL LAYER

A semiconductor device includes a substrate, a gate stack, and epitaxy structures. The substrate has a P-type region. The gate stack is over the P-type region of the substrate and includes a gate dielectric layer, a bottom work function (WF) metal layer, a top WF metal layer, and a filling metal. Th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU, Chee-Wee, HSIAO, Yi-Hsiu, KUOK, Kun-Wa, HUANG, Chih-Hsiung, TSAI, Chung-En
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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