AIR GAP SPACER FOR METAL GATES

AIR GAP SPACER FOR METAL GATES

A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may...

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Hauptverfasser: Lie, Fee Li, Bergendahl, Marc A, Teehan, Sean, Cheng, Kangguo, Sporre, John R, Miller, Eric R
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lie, Fee Li
Bergendahl, Marc A
Teehan, Sean
Cheng, Kangguo
Sporre, John R
Miller, Eric R
description A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023352480A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023352480A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023352480A13</originalsourceid><addsrcrecordid>eNrjZJBz9AxScHcMUAgOcHR2DVJw8w9S8HUNcfQBCoa4BvMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDI2NjUyMTCwNHQ2PiVAEAB7wh0w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>AIR GAP SPACER FOR METAL GATES</title><source>esp@cenet</source><creator>Lie, Fee Li ; Bergendahl, Marc A ; Teehan, Sean ; Cheng, Kangguo ; Sporre, John R ; Miller, Eric R</creator><creatorcontrib>Lie, Fee Li ; Bergendahl, Marc A ; Teehan, Sean ; Cheng, Kangguo ; Sporre, John R ; Miller, Eric R</creatorcontrib><description>A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231102&amp;DB=EPODOC&amp;CC=US&amp;NR=2023352480A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231102&amp;DB=EPODOC&amp;CC=US&amp;NR=2023352480A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lie, Fee Li</creatorcontrib><creatorcontrib>Bergendahl, Marc A</creatorcontrib><creatorcontrib>Teehan, Sean</creatorcontrib><creatorcontrib>Cheng, Kangguo</creatorcontrib><creatorcontrib>Sporre, John R</creatorcontrib><creatorcontrib>Miller, Eric R</creatorcontrib><title>AIR GAP SPACER FOR METAL GATES</title><description>A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBz9AxScHcMUAgOcHR2DVJw8w9S8HUNcfQBCoa4BvMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvjQYCMDI2NjUyMTCwNHQ2PiVAEAB7wh0w</recordid><startdate>20231102</startdate><enddate>20231102</enddate><creator>Lie, Fee Li</creator><creator>Bergendahl, Marc A</creator><creator>Teehan, Sean</creator><creator>Cheng, Kangguo</creator><creator>Sporre, John R</creator><creator>Miller, Eric R</creator><scope>EVB</scope></search><sort><creationdate>20231102</creationdate><title>AIR GAP SPACER FOR METAL GATES</title><author>Lie, Fee Li ; Bergendahl, Marc A ; Teehan, Sean ; Cheng, Kangguo ; Sporre, John R ; Miller, Eric R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023352480A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lie, Fee Li</creatorcontrib><creatorcontrib>Bergendahl, Marc A</creatorcontrib><creatorcontrib>Teehan, Sean</creatorcontrib><creatorcontrib>Cheng, Kangguo</creatorcontrib><creatorcontrib>Sporre, John R</creatorcontrib><creatorcontrib>Miller, Eric R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lie, Fee Li</au><au>Bergendahl, Marc A</au><au>Teehan, Sean</au><au>Cheng, Kangguo</au><au>Sporre, John R</au><au>Miller, Eric R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>AIR GAP SPACER FOR METAL GATES</title><date>2023-11-02</date><risdate>2023</risdate><abstract>A method of forming a semiconductor device that includes forming a trench adjacent to a gate structure to expose a contact surface of one of a source region and a drain region. A sacrificial spacer may be formed on a sidewall of the trench and on a sidewall of the gate structure. A metal contact may then be formed in the trench to at least one of the source region and the drain region. The metal contact has a base width that is less than an upper surface width of the metal contact. The sacrificial spacer may be removed, and a substantially conformal dielectric material layer can be formed on sidewalls of the metal contact and the gate structure. Portions of the conformally dielectric material layer contact one another at a pinch off region to form an air gap between the metal contact and the gate structure.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title AIR GAP SPACER FOR METAL GATES
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