SUBSTRATE-INTEGRATED WAVEGUIDE

SUBSTRATE-INTEGRATED WAVEGUIDE

One example includes a method for fabricating a substrate-integrated waveguide (SIW). The method includes forming a first metal layer on a carrier surface. The first metal layer can extend along an axis. The method also includes forming a first metal sidewall extending from a first edge of the first...

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Hauptverfasser: Tang, Yiqi, Murugan, Rajen Manicon, Herbsommer, Juan Alejandro
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tang, Yiqi
Murugan, Rajen Manicon
Herbsommer, Juan Alejandro
description One example includes a method for fabricating a substrate-integrated waveguide (SIW). The method includes forming a first metal layer on a carrier surface. The first metal layer can extend along an axis. The method also includes forming a first metal sidewall extending from a first edge of the first metal layer along the axis and forming a second metal sidewall extending from a second edge of the first metal layer opposite the first edge along the axis to form a trough extending along the axis. The method also includes providing a dielectric material over the first metal layer and over the first and second metal sidewalls. The method further includes forming a second metal layer over the dielectric material and over the first and second metal sidewalls. The second metal layer can extend along the axis to enclose the SIW in all radial directions along the axis.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SUBSTRATE-INTEGRATED WAVEGUIDE
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