MEMORY APPARATUS AND METHODS INCLUDING MERGED PROCESS FOR MEMORY CELL PILLAR AND SOURCE STRUCTURE

Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second openings; f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kim, Byeung Chul, Wolanyk, Joshua, Hill, Richard J, Fazil, Damir
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!