SENSE LINE AND CELL CONTACT
Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by...
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| creator | McDaniel, Terrence B Nair, Vinay Benson, Russell A Wang, Kuo-Chen |
| description | Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023345708A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023345708A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023345708A13</originalsourceid><addsrcrecordid>eNrjZJAOdvULdlXw8fRzVXD0c1FwdvXxUXD29wtxdA7hYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGxiam5gYWjobGxKkCAK7UIR8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SENSE LINE AND CELL CONTACT</title><source>esp@cenet</source><creator>McDaniel, Terrence B ; Nair, Vinay ; Benson, Russell A ; Wang, Kuo-Chen</creator><creatorcontrib>McDaniel, Terrence B ; Nair, Vinay ; Benson, Russell A ; Wang, Kuo-Chen</creatorcontrib><description>Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region.</description><language>eng</language><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231026&DB=EPODOC&CC=US&NR=2023345708A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231026&DB=EPODOC&CC=US&NR=2023345708A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>McDaniel, Terrence B</creatorcontrib><creatorcontrib>Nair, Vinay</creatorcontrib><creatorcontrib>Benson, Russell A</creatorcontrib><creatorcontrib>Wang, Kuo-Chen</creatorcontrib><title>SENSE LINE AND CELL CONTACT</title><description>Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOdvULdlXw8fRzVXD0c1FwdvXxUXD29wtxdA7hYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGxiam5gYWjobGxKkCAK7UIR8</recordid><startdate>20231026</startdate><enddate>20231026</enddate><creator>McDaniel, Terrence B</creator><creator>Nair, Vinay</creator><creator>Benson, Russell A</creator><creator>Wang, Kuo-Chen</creator><scope>EVB</scope></search><sort><creationdate>20231026</creationdate><title>SENSE LINE AND CELL CONTACT</title><author>McDaniel, Terrence B ; Nair, Vinay ; Benson, Russell A ; Wang, Kuo-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023345708A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>online_resources</toplevel><creatorcontrib>McDaniel, Terrence B</creatorcontrib><creatorcontrib>Nair, Vinay</creatorcontrib><creatorcontrib>Benson, Russell A</creatorcontrib><creatorcontrib>Wang, Kuo-Chen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>McDaniel, Terrence B</au><au>Nair, Vinay</au><au>Benson, Russell A</au><au>Wang, Kuo-Chen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SENSE LINE AND CELL CONTACT</title><date>2023-10-26</date><risdate>2023</risdate><abstract>Methods, apparatuses, and systems related to a sense line and cell contact for a semiconductor structure are described. An example apparatus includes a first source/drain region and a second source/drain region, where the first source/drain region and the second source/drain region are separated by a channel, a gate opposing the channel, a sense line material coupled to the first source/drain region by a cell contact, where the cell contact is made from a combination of a first polysilicon material and a second polysilicon material, and a storage node coupled to the second source/drain region.</abstract><oa>free_for_read</oa></addata></record> |
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| title | SENSE LINE AND CELL CONTACT |
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