FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lin, Kuan-Wei, Su, Yu-Te, Pan, Yu-Chi, Chuang, Ying-Liang, Huang, Kuo-Bin, Yeh, Ming-Hsi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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