SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM
A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a...
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| creator | YACHI, Masamichi NAKADA, Takayuki |
| description | A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023332288A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023332288A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023332288A13</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbs4iPoPD1wraLJ0jcmrLZikvOS5liJxEi3UzZ83BXF2unDvuWdZvAMfQyQVETryGkNo3QlU16nccSjBYmy8AV-DVY5rpSPTjAS0rfbOsI6ewOCl1VhmRzYwIeQpkj__BuUMEGpPZj5bNC3bdbG4Dfcpbb65KrY1Rt3s0vjs0zQO1_RIr56D2AsppRBVpQ7yP-oDgII8Gw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM</title><source>esp@cenet</source><creator>YACHI, Masamichi ; NAKADA, Takayuki</creator><creatorcontrib>YACHI, Masamichi ; NAKADA, Takayuki</creatorcontrib><description>A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231019&DB=EPODOC&CC=US&NR=2023332288A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231019&DB=EPODOC&CC=US&NR=2023332288A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YACHI, Masamichi</creatorcontrib><creatorcontrib>NAKADA, Takayuki</creatorcontrib><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM</title><description>A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbs4iPoPD1wraLJ0jcmrLZikvOS5liJxEi3UzZ83BXF2unDvuWdZvAMfQyQVETryGkNo3QlU16nccSjBYmy8AV-DVY5rpSPTjAS0rfbOsI6ewOCl1VhmRzYwIeQpkj__BuUMEGpPZj5bNC3bdbG4Dfcpbb65KrY1Rt3s0vjs0zQO1_RIr56D2AsppRBVpQ7yP-oDgII8Gw</recordid><startdate>20231019</startdate><enddate>20231019</enddate><creator>YACHI, Masamichi</creator><creator>NAKADA, Takayuki</creator><scope>EVB</scope></search><sort><creationdate>20231019</creationdate><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM</title><author>YACHI, Masamichi ; NAKADA, Takayuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023332288A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YACHI, Masamichi</creatorcontrib><creatorcontrib>NAKADA, Takayuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YACHI, Masamichi</au><au>NAKADA, Takayuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM</title><date>2023-10-19</date><risdate>2023</risdate><abstract>A substrate processing apparatus includes: a process container; an exhaust path configured to branch into a first exhaust line and a second exhaust line; a first valve that is installed in the first exhaust line; a second valve that is installed in the second exhaust line; a pressure detector; and a pressure control device configured to be capable of: selecting one valve among the first valve and the second valve according to a pressure setting value in the process container, such that a pressure detection value detected by the pressure detector approaches the pressure setting value; setting an opening degree of an other valve, which is not selected among the first valve and the second valve, to a constant state; and adjusting an opening degree of the selected one valve while maintaining the opening degree of the selected one valve at a value greater than zero.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PRESSURE CONTROL DEVICE, AND RECORDING MEDIUM |
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