SRAM CELL WITH BALANCED WRITE PORT

A semiconductor device includes first, second, third, fourth, and fifth active regions each extending lengthwise along a first direction, and first, second, third, fourth, fifth, and sixth gates each extending lengthwise along a second direction perpendicular to the first direction. The first, secon...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Yu-Kuan, Hsu, Kuo-Hsiu, Hung, Lien-Jung, Wang, Ping-Wei, Chang, Feng-Ming
Format: Patent
Sprache:eng
Schlagworte:
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