LIGHT-EMITTING DEVICE
A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semicond...
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| creator | Hung, Chien-Ya Chen, Chao-Hsing Lin, Yi-Hung |
| description | A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 μm. |
| format | Patent |
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a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 μm.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231012&DB=EPODOC&CC=US&NR=2023327048A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231012&DB=EPODOC&CC=US&NR=2023327048A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hung, Chien-Ya</creatorcontrib><creatorcontrib>Chen, Chao-Hsing</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><title>LIGHT-EMITTING DEVICE</title><description>A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 μm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD18XT3CNF19fUMCfH0c1dwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGxkbmBiYWjobGxKkCAA9jH8Q</recordid><startdate>20231012</startdate><enddate>20231012</enddate><creator>Hung, Chien-Ya</creator><creator>Chen, Chao-Hsing</creator><creator>Lin, Yi-Hung</creator><scope>EVB</scope></search><sort><creationdate>20231012</creationdate><title>LIGHT-EMITTING DEVICE</title><author>Hung, Chien-Ya ; Chen, Chao-Hsing ; Lin, Yi-Hung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023327048A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hung, Chien-Ya</creatorcontrib><creatorcontrib>Chen, Chao-Hsing</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hung, Chien-Ya</au><au>Chen, Chao-Hsing</au><au>Lin, Yi-Hung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIGHT-EMITTING DEVICE</title><date>2023-10-12</date><risdate>2023</risdate><abstract>A light-emitting device includes a substrate; a first semiconductor layer and a semiconductor platform disposed on the first semiconductor layer, wherein the semiconductor platform includes a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a plurality of openings passing through the semiconductor platform to uncover the first semiconductor layer; a plurality of first electrodes and a plurality of first electrode pads on the first semiconductor layer in the plurality of openings and not covering the semiconductor platform; a second electrode and a second electrode pad on the second semiconductor layer and not covering the first semiconductor layer in the plurality of openings, wherein a first surface of the plurality of first electrode pads is higher than a second surface of the second electrode pad, and a step difference between the first surface and the second surface is less than 2 μm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | LIGHT-EMITTING DEVICE |
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