FIRST FIRE AND COLD START IN MEMORIES WITH THRESHOLD SWITCHING SELECTORS

In a memory array with a cross-point structure, at each cross-point junction a programmable resistive memory element, such as an MRAM memory cell, is connected in series with a threshold switching selector, such as an ovonic threshold switch. The threshold switching selector switches to a conducting...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Saenz, Juan P, Hemink, Gerrit Jan, Tran, Michael Nicolas Albert, Grobis, Michael, Reiner, James W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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