SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
A semiconductor memory device includes a back gate electrode, a gate electrode on the back gate electrode, a channel layer between the gate electrode and the back gate electrode, a gate insulating layer between the channel layer and the gate electrode, and a ferroelectric layer between the back gate...
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| creator | Lee, Bongyong HAYAKAWA, Yukio Cho, Siyeon Park, Hyunmog |
| description | A semiconductor memory device includes a back gate electrode, a gate electrode on the back gate electrode, a channel layer between the gate electrode and the back gate electrode, a gate insulating layer between the channel layer and the gate electrode, and a ferroelectric layer between the back gate electrode and the channel layer. |
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| title | SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME |
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