MAGNETIC MEMORY DEVICE
In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the...
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| creator | EEH, Young Min KITAGAWA, Eiji |
| description | In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. The layer stack includes a fourth non-magnetic layer being in contact with the third non-magnetic layer and containing platinum (Pt). |
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The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. 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The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. 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The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. The layer stack includes a fourth non-magnetic layer being in contact with the third non-magnetic layer and containing platinum (Pt).</abstract><oa>free_for_read</oa></addata></record> |
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| title | MAGNETIC MEMORY DEVICE |
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