SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes first memory layers and second memory layers arranged in alternation in a first direction. First memory layers and second memory layers include memory strings and first wirings connected to these memory strings in common. First memory layers and second memory l...
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creator | MATSUO, Kouji WATANABE, Tadayoshi |
description | A semiconductor memory device includes first memory layers and second memory layers arranged in alternation in a first direction. First memory layers and second memory layers include memory strings and first wirings connected to these memory strings in common. First memory layers and second memory layers include: signal amplifier circuits electrically connected to the first wirings; second wirings connected to the signal amplifier circuits; first switch transistors connected to the second wirings; third wirings electrically connected to the second wirings via the first switch transistors; and fourth wirings electrically connected to the second wirings without via the first switch transistors. The semiconductor memory device includes: first via-contact electrodes extending in the first direction and connected to the third wirings in first memory layers; and second via-contact electrodes extending in the first direction and connected to the fourth wirings in second memory layers. |
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First memory layers and second memory layers include memory strings and first wirings connected to these memory strings in common. First memory layers and second memory layers include: signal amplifier circuits electrically connected to the first wirings; second wirings connected to the signal amplifier circuits; first switch transistors connected to the second wirings; third wirings electrically connected to the second wirings via the first switch transistors; and fourth wirings electrically connected to the second wirings without via the first switch transistors. The semiconductor memory device includes: first via-contact electrodes extending in the first direction and connected to the third wirings in first memory layers; and second via-contact electrodes extending in the first direction and connected to the fourth wirings in second memory layers.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230928&DB=EPODOC&CC=US&NR=2023307359A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230928&DB=EPODOC&CC=US&NR=2023307359A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUO, Kouji</creatorcontrib><creatorcontrib>WATANABE, Tadayoshi</creatorcontrib><title>SEMICONDUCTOR MEMORY DEVICE</title><description>A semiconductor memory device includes first memory layers and second memory layers arranged in alternation in a first direction. First memory layers and second memory layers include memory strings and first wirings connected to these memory strings in common. First memory layers and second memory layers include: signal amplifier circuits electrically connected to the first wirings; second wirings connected to the signal amplifier circuits; first switch transistors connected to the second wirings; third wirings electrically connected to the second wirings via the first switch transistors; and fourth wirings electrically connected to the second wirings without via the first switch transistors. 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First memory layers and second memory layers include memory strings and first wirings connected to these memory strings in common. First memory layers and second memory layers include: signal amplifier circuits electrically connected to the first wirings; second wirings connected to the signal amplifier circuits; first switch transistors connected to the second wirings; third wirings electrically connected to the second wirings via the first switch transistors; and fourth wirings electrically connected to the second wirings without via the first switch transistors. The semiconductor memory device includes: first via-contact electrodes extending in the first direction and connected to the third wirings in first memory layers; and second via-contact electrodes extending in the first direction and connected to the fourth wirings in second memory layers.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
title | SEMICONDUCTOR MEMORY DEVICE |
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