OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location...

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Hauptverfasser:	Yang, Janggyoo, Choi, Myungsun, Ha, Jaemin, Park, Soonam, Gwak, Dooyoung
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Yang, Janggyoo Choi, Myungsun Ha, Jaemin Park, Soonam Gwak, Dooyoung
description	An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023307217A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023307217A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023307217A13</originalsourceid><addsrcrecordid>eNqNzTsLwjAUhuEuDqL-hwPOQpsMnQ_JicmQC7m4liJxEi3U_48GHBydvuF54dt21QeKmI13YClrL8EroCy0cWfAEPCDJQE6-eMWXVEocomtSmSN8E4WkX0ESRcjCEpqlDVBQkv7bnOb72s9fHfXHVU7OdXlOdV1ma_1UV9TSaxnnPcjG0Yc-H_VG1R8Nak</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><source>esp@cenet</source><creator>Yang, Janggyoo ; Choi, Myungsun ; Ha, Jaemin ; Park, Soonam ; Gwak, Dooyoung</creator><creatorcontrib>Yang, Janggyoo ; Choi, Myungsun ; Ha, Jaemin ; Park, Soonam ; Gwak, Dooyoung</creatorcontrib><description>An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230928&DB=EPODOC&CC=US&NR=2023307217A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230928&DB=EPODOC&CC=US&NR=2023307217A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yang, Janggyoo</creatorcontrib><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Ha, Jaemin</creatorcontrib><creatorcontrib>Park, Soonam</creatorcontrib><creatorcontrib>Gwak, Dooyoung</creatorcontrib><title>OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><description>An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzTsLwjAUhuEuDqL-hwPOQpsMnQ_JicmQC7m4liJxEi3U_48GHBydvuF54dt21QeKmI13YClrL8EroCy0cWfAEPCDJQE6-eMWXVEocomtSmSN8E4WkX0ESRcjCEpqlDVBQkv7bnOb72s9fHfXHVU7OdXlOdV1ma_1UV9TSaxnnPcjG0Yc-H_VG1R8Nak</recordid><startdate>20230928</startdate><enddate>20230928</enddate><creator>Yang, Janggyoo</creator><creator>Choi, Myungsun</creator><creator>Ha, Jaemin</creator><creator>Park, Soonam</creator><creator>Gwak, Dooyoung</creator><scope>EVB</scope></search><sort><creationdate>20230928</creationdate><title>OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><author>Yang, Janggyoo ; Choi, Myungsun ; Ha, Jaemin ; Park, Soonam ; Gwak, Dooyoung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023307217A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Yang, Janggyoo</creatorcontrib><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Ha, Jaemin</creatorcontrib><creatorcontrib>Park, Soonam</creatorcontrib><creatorcontrib>Gwak, Dooyoung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Janggyoo</au><au>Choi, Myungsun</au><au>Ha, Jaemin</au><au>Park, Soonam</au><au>Gwak, Dooyoung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME</title><date>2023-09-28</date><risdate>2023</risdate><abstract>An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	OPERATION METHOD OF ETCHING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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