VARIABLE RESISTANCE MEMORY DEVICE

A variable resistance memory device includes a first conductive line extending on a substrate in a first horizontal direction; a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction; and a memory cell at an int...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PARK, Wonjun, AHN, Dongho, KIM, Chungman, PARK, Changyup
Format: Patent
Sprache:eng
Schlagworte:
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