SEMICONDUCTOR STORAGE DEVICE

According to one embodiment, a semiconductor storage device includes a first electrode and a second electrode spaced in a first direction and a phase change layer provided between the first electrode and the second electrode. The phase change layer comprises at least one of germanium (Ge), antimony...

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Bibliographische Detailangaben
Hauptverfasser: WATANABE, Ibuki, OHNISHI, Yuki, ODE, Hiroyuki
Format: Patent
Sprache:eng
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