STRUCTURE AND METHOD FOR INTEGRATING MRAM AND LOGIC DEVICES

A first metal layer extends across memory and logic device regions of a semiconductor structure. A dielectric barrier layer is disposed over the first metal layer. A first dielectric layer is disposed over the dielectric barrier layer in the memory device region and not in the logic device region. M...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chen, Dian-Hau, Shen, Hsiang-Ku
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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