MEMORY DEVICE INCLUDING SELECT LINES

The present disclosure relates to a memory device including a first memory block including a first group of cell plugs and a second group of cell plugs, a second memory block including a third group of cell plugs and a fourth group of cell plugs, a connection region located between the first and sec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAN, Yun Cheol, KIM, Nam Kuk, SONG, Dae Ro
Format:	Patent
Sprache:	eng
Schlagworte:	CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING PHYSICS
Online-Zugang:	Volltext bestellen
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