METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS

Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate i...

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Hauptverfasser: SEINO, Atsuro, OGAWA, Arito
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creator SEINO, Atsuro
OGAWA, Arito
description Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
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