METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate i...
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creator | SEINO, Atsuro OGAWA, Arito |
description | Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element. |
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(b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230921&DB=EPODOC&CC=US&NR=2023295800A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230921&DB=EPODOC&CC=US&NR=2023295800A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEINO, Atsuro</creatorcontrib><creatorcontrib>OGAWA, Arito</creatorcontrib><title>METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS</title><description>Included are: (a) supplying a first processing gas containing a first element and a halogen to a substrate; (b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbEKwjAURbs4iPoPAVeF2CLo-Hx5tRmSlCTPtRSJk2ih_oB_bhWhjk4X7jncO82ehmLllHClqL1DCkHbowh8CNFDpJUYuQHLJWBk_1HIaHRWMUbnhaKTxsH2hM6rNzekNBsBVo1rvxdQ1zB0HObZ5NJe-7T45ixblhSxWqfu3qS-a8_plh4Nh1zmRb7f7qSETfGf9QLawj3X</recordid><startdate>20230921</startdate><enddate>20230921</enddate><creator>SEINO, Atsuro</creator><creator>OGAWA, Arito</creator><scope>EVB</scope></search><sort><creationdate>20230921</creationdate><title>METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS</title><author>SEINO, Atsuro ; 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(b) supplying a second processing gas including an N-N bond and an N-H bond to the substrate; and (c) performing (a) and (b) X times, X being a natural number, in a state where the substrate is heated to a temperature of 250° C. or lower to form a first film containing the first element.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS |
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