APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A THREE-DIMENSIONAL MEMORY ARCHITECTURE
An apparatus, system and method. The apparatus is to be coupled to a memory array of a memory device. The apparatus, in response to a determination of a set command to be implemented on first memory cells of the memory array, is to control an execution of a set pre-read operation on the first memory...
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creator | Husain, Yasir Mohsin Guliani, Sandeep Kumar Arendt, Kevin E Zhao, Xuming |
description | An apparatus, system and method. The apparatus is to be coupled to a memory array of a memory device. The apparatus, in response to a determination of a set command to be implemented on first memory cells of the memory array, is to control an execution of a set pre-read operation on the first memory cells by causing application, by a voltage source, of a first demarcation voltage VDM0 across each of the first memory cells during a set pre-read time period. The apparatus is further to, in response to a determination of a reset command to be implemented on second memory cells of the memory array, control an execution of a reset pre-read operation on the second memory cells by causing application, by the voltage source, of a second demarcation voltage VDM3 across each of the second memory cells during a reset pre-read time period, wherein the set pre-read time period and the reset pre-read time period do not overlap, the voltage source to supply a single voltage value at any given time. |
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The apparatus is further to, in response to a determination of a reset command to be implemented on second memory cells of the memory array, control an execution of a reset pre-read operation on the second memory cells by causing application, by the voltage source, of a second demarcation voltage VDM3 across each of the second memory cells during a reset pre-read time period, wherein the set pre-read time period and the reset pre-read time period do not overlap, the voltage source to supply a single voltage value at any given time.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=US&NR=2023289099A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230914&DB=EPODOC&CC=US&NR=2023289099A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Husain, Yasir Mohsin</creatorcontrib><creatorcontrib>Guliani, Sandeep Kumar</creatorcontrib><creatorcontrib>Arendt, Kevin E</creatorcontrib><creatorcontrib>Zhao, Xuming</creatorcontrib><title>APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A THREE-DIMENSIONAL MEMORY ARCHITECTURE</title><description>An apparatus, system and method. 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The apparatus is further to, in response to a determination of a reset command to be implemented on second memory cells of the memory array, control an execution of a reset pre-read operation on the second memory cells by causing application, by the voltage source, of a second demarcation voltage VDM3 across each of the second memory cells during a reset pre-read time period, wherein the set pre-read time period and the reset pre-read time period do not overlap, the voltage source to supply a single voltage value at any given time.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQgOEuDqK-w4GrhdoudjySkwSapCSXQqdSJJ1EC_X9MYMP4PTDz7cvFux79MgxXMAQKycBrYQwBiYD7ECbviNDlgFBRuxgkAaCUPmBs3my8kSl1NkE7WwWhozzI6AXSjMJjp6OxW6Zn1s6_Xoozndiocq0vqe0rfMjvdJniqGu6qa-tVXb4rX5T30BXLI10g</recordid><startdate>20230914</startdate><enddate>20230914</enddate><creator>Husain, Yasir Mohsin</creator><creator>Guliani, Sandeep Kumar</creator><creator>Arendt, Kevin E</creator><creator>Zhao, Xuming</creator><scope>EVB</scope></search><sort><creationdate>20230914</creationdate><title>APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A THREE-DIMENSIONAL MEMORY ARCHITECTURE</title><author>Husain, Yasir Mohsin ; Guliani, Sandeep Kumar ; Arendt, Kevin E ; Zhao, Xuming</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023289099A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Husain, Yasir Mohsin</creatorcontrib><creatorcontrib>Guliani, Sandeep Kumar</creatorcontrib><creatorcontrib>Arendt, Kevin E</creatorcontrib><creatorcontrib>Zhao, Xuming</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Husain, Yasir Mohsin</au><au>Guliani, Sandeep Kumar</au><au>Arendt, Kevin E</au><au>Zhao, Xuming</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A THREE-DIMENSIONAL MEMORY ARCHITECTURE</title><date>2023-09-14</date><risdate>2023</risdate><abstract>An apparatus, system and method. The apparatus is to be coupled to a memory array of a memory device. The apparatus, in response to a determination of a set command to be implemented on first memory cells of the memory array, is to control an execution of a set pre-read operation on the first memory cells by causing application, by a voltage source, of a first demarcation voltage VDM0 across each of the first memory cells during a set pre-read time period. The apparatus is further to, in response to a determination of a reset command to be implemented on second memory cells of the memory array, control an execution of a reset pre-read operation on the second memory cells by causing application, by the voltage source, of a second demarcation voltage VDM3 across each of the second memory cells during a reset pre-read time period, wherein the set pre-read time period and the reset pre-read time period do not overlap, the voltage source to supply a single voltage value at any given time.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING INFORMATION STORAGE PHYSICS STATIC STORES |
title | APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A THREE-DIMENSIONAL MEMORY ARCHITECTURE |
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