SEMICONDUCTOR SUBSTRATE HAVING AN ALIGNMENT STRUCTURE

A semiconductor substrate includes a semiconductor base substrate. An alignment structure is formed on a surface of the semiconductor base substrate. An epitaxial layer is deposited on the surface of the semiconductor base substrate. The alignment structure includes an area of the surface of the semiconductor base substrate that is formed as a groove pattern. Grooves of the groove pattern are aligned with a specific crystallographic direction of the semiconductor base substrate. The specific crystallographic direction provides for a slower epitaxial growth rate on such a groove-patterned base substrate surface area compared to epitaxial growth on a surface of the semiconductor base substrate adjacent to the groove-patterned area.