PLASMA DICED WAFERS AND METHODS THEREOF

PLASMA DICED WAFERS AND METHODS THEREOF

Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing...

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Hauptverfasser: Rosario, Jackson Fernandez, Neo, Chan Loong, Sarile, JR., Enrique E, Shim, Il Kwon, Shariff, Dzafir Bin Mohd, De Villa, Ronnie M
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Rosario, Jackson Fernandez
Neo, Chan Loong
Sarile, JR., Enrique E
Shim, Il Kwon
Shariff, Dzafir Bin Mohd
De Villa, Ronnie M
description Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing is employed to form a modified layer with cracks on a bottom portion of the wafer. Plasma dicing partially dices the processed wafer to about the modified layer. The dicing tape is expanded laterally away from the center of the partially diced processed wafer, singulating it into individual dies. Singulation of the partially plasma diced processed wafer is facilitated by the modified layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023274979A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023274979A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023274979A13</originalsourceid><addsrcrecordid>eNrjZFAP8HEM9nVUcPF0dnVRCHd0cw0KVnD0c1HwdQ3x8HcJVgjxcA1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGRuYmluaWjobGxKkCAFRMJI8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA DICED WAFERS AND METHODS THEREOF</title><source>esp@cenet</source><creator>Rosario, Jackson Fernandez ; Neo, Chan Loong ; Sarile, JR., Enrique E ; Shim, Il Kwon ; Shariff, Dzafir Bin Mohd ; De Villa, Ronnie M</creator><creatorcontrib>Rosario, Jackson Fernandez ; Neo, Chan Loong ; Sarile, JR., Enrique E ; Shim, Il Kwon ; Shariff, Dzafir Bin Mohd ; De Villa, Ronnie M</creatorcontrib><description>Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing is employed to form a modified layer with cracks on a bottom portion of the wafer. Plasma dicing partially dices the processed wafer to about the modified layer. The dicing tape is expanded laterally away from the center of the partially diced processed wafer, singulating it into individual dies. Singulation of the partially plasma diced processed wafer is facilitated by the modified layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230831&amp;DB=EPODOC&amp;CC=US&amp;NR=2023274979A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230831&amp;DB=EPODOC&amp;CC=US&amp;NR=2023274979A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Rosario, Jackson Fernandez</creatorcontrib><creatorcontrib>Neo, Chan Loong</creatorcontrib><creatorcontrib>Sarile, JR., Enrique E</creatorcontrib><creatorcontrib>Shim, Il Kwon</creatorcontrib><creatorcontrib>Shariff, Dzafir Bin Mohd</creatorcontrib><creatorcontrib>De Villa, Ronnie M</creatorcontrib><title>PLASMA DICED WAFERS AND METHODS THEREOF</title><description>Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing is employed to form a modified layer with cracks on a bottom portion of the wafer. Plasma dicing partially dices the processed wafer to about the modified layer. The dicing tape is expanded laterally away from the center of the partially diced processed wafer, singulating it into individual dies. Singulation of the partially plasma diced processed wafer is facilitated by the modified layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAP8HEM9nVUcPF0dnVRCHd0cw0KVnD0c1HwdQ3x8HcJVgjxcA1y9XfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGRuYmluaWjobGxKkCAFRMJI8</recordid><startdate>20230831</startdate><enddate>20230831</enddate><creator>Rosario, Jackson Fernandez</creator><creator>Neo, Chan Loong</creator><creator>Sarile, JR., Enrique E</creator><creator>Shim, Il Kwon</creator><creator>Shariff, Dzafir Bin Mohd</creator><creator>De Villa, Ronnie M</creator><scope>EVB</scope></search><sort><creationdate>20230831</creationdate><title>PLASMA DICED WAFERS AND METHODS THEREOF</title><author>Rosario, Jackson Fernandez ; Neo, Chan Loong ; Sarile, JR., Enrique E ; Shim, Il Kwon ; Shariff, Dzafir Bin Mohd ; De Villa, Ronnie M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023274979A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Rosario, Jackson Fernandez</creatorcontrib><creatorcontrib>Neo, Chan Loong</creatorcontrib><creatorcontrib>Sarile, JR., Enrique E</creatorcontrib><creatorcontrib>Shim, Il Kwon</creatorcontrib><creatorcontrib>Shariff, Dzafir Bin Mohd</creatorcontrib><creatorcontrib>De Villa, Ronnie M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Rosario, Jackson Fernandez</au><au>Neo, Chan Loong</au><au>Sarile, JR., Enrique E</au><au>Shim, Il Kwon</au><au>Shariff, Dzafir Bin Mohd</au><au>De Villa, Ronnie M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA DICED WAFERS AND METHODS THEREOF</title><date>2023-08-31</date><risdate>2023</risdate><abstract>Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing is employed to form a modified layer with cracks on a bottom portion of the wafer. Plasma dicing partially dices the processed wafer to about the modified layer. The dicing tape is expanded laterally away from the center of the partially diced processed wafer, singulating it into individual dies. Singulation of the partially plasma diced processed wafer is facilitated by the modified layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PLASMA DICED WAFERS AND METHODS THEREOF
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