SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME

A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and...

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Bibliographische Detailangaben
Hauptverfasser: LEE, Seunghun, KIM, Gyeom, KIM, Dohee, KIM, Jinbum, KIM, Jaemun, KIM, Dahye, KIM, Dongwoo
Format: Patent
Sprache:eng
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