SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the...

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Hauptverfasser: HAMASAKI, Ryutaro, YAMADA, Takuya, NOGUCHI, Seiji, SAKURAI, Yosuke, OZAKI, Daisuke
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creator HAMASAKI, Ryutaro
YAMADA, Takuya
NOGUCHI, Seiji
SAKURAI, Yosuke
OZAKI, Daisuke
description Provided is a semiconductor device including: a first trench contact portion provided to an inside of a contact region; a second trench contact portion provided to an inside of an emitter region; a first plug portion of a second conductivity type, which is provided in contact with a lower end of the first trench contact portion and has a higher concentration than a base region; and a second plug portion of a second conductivity type, which is provided in contact with a lower end of the second trench contact portion, is provided to a position closer to a lower surface than the first plug portion, and has a higher concentration than the base region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
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