VERTICALLY STACKED CASCODE BIPOLAR JUNCTION TRANSISTOR (BJT) PAIR SENSOR

VERTICALLY STACKED CASCODE BIPOLAR JUNCTION TRANSISTOR (BJT) PAIR SENSOR

A sensor device includes a vertically stacked cascode bipolar junction transistor pair, and a first trench having a first sidewall, wherein a portion of the first sidewall is provided by the first sensing surface, wherein a bipolar junction transistor and a dual-base bipolar junction transistor of t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Reznicek, Alexander, Hekmatshoartabari, Bahman
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A sensor device includes a vertically stacked cascode bipolar junction transistor pair, and a first trench having a first sidewall, wherein a portion of the first sidewall is provided by the first sensing surface, wherein a bipolar junction transistor and a dual-base bipolar junction transistor of the cascode bipolar junction transistor pair are stacked vertically along the first trench.