ION IMPLANTER AND ION IMPLANTATION METHOD

Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Kudo, Tetsuya
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!