ION IMPLANTER AND ION IMPLANTATION METHOD

Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).