THRESHOLD VOLTAGE-PROGRAMMABLE FIELD EFFECT TRANSISTOR-BASED MEMORY CELLS AND LOOK-UP TABLE IMPLEMENTED USING THE MEMORY CELLS

Disclosed is threshold voltage (VT)-programmable field effect transistor (FET)-based memory cell including a first transistor and a second transistor (which has an electric-field based programmable VT) connected in series between two voltage source lines. The gates of the transistors are connected t...

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Bibliographische Detailangaben

Hauptverfasser:	Parvarandeh, Pirooz, Gopinath, Venkatesh P
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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