NON-VOLATILE MEMORY DEVICE

In some embodiments, a non-volatile memory device includes a first semiconductor layer that includes a first memory cell array disposed on a first cell region, a second memory cell array disposed on a second cell region, and a first metal pad. The non-volatile memory device further includes a second...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Byeon, Daeseok, CHO, Beakhyung
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!