III-nitride power semiconductor based heterojunction diode

III-nitride power semiconductor based heterojunction diode

We describe a smart high voltage/power III-nitride semiconductor based diode or rectifier comprising first and second terminals, and further comprising an active device (e.g. a transistor such as a GaN HEMT transistor), a sensing device (e.g. a sensing diode/transistor), a sensing load (e.g. a resis...

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Hauptverfasser: Arnold, Martin, Efthymiou, Loizos, Longobardi, Giorgia, Udrea, Florin, Fung, Sheung Wai
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Arnold, Martin
Efthymiou, Loizos
Longobardi, Giorgia
Udrea, Florin
Fung, Sheung Wai
description We describe a smart high voltage/power III-nitride semiconductor based diode or rectifier comprising first and second terminals, and further comprising an active device (e.g. a transistor such as a GaN HEMT transistor), a sensing device (e.g. a sensing diode/transistor), a sensing load (e.g. a resistor), wherein the smart high voltage/power III-nitride semiconductor based diode or rectifier is configured to output a sensing signal corresponding a current through the sensing device and/or a voltage drop across the sensing load, wherein the sensing signal is indicative of a current flowing between the first and second terminal when a bias is applied between the first and second terminals.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title III-nitride power semiconductor based heterojunction diode
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