GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING

Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to fo...

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Hauptverfasser:	Gilmore, Damien Thomas, Arendt, Mark Francis
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Gilmore, Damien Thomas Arendt, Mark Francis
description	Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer and oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer.
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title	GATE AND LOCOS DIELECTRICS GROWN USING LOCOS PROCESSING
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